The 74ABT640 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive.
The 74ABT640 device is an octal transceiver featuring inverting 3-State bus compatible outputs in both send and receive directions. The control function implementation minimizes external timing requirements. The device features an Output Enable (OE) input for easy cascading and a Direction (DIR) input for direction control.
| SYMBOL |
PARAMETER |
CONDITIONS |
RATING |
UNIT |
| VCC |
DC supply voltage |
|
0.5 to +7.0 |
V |
| IIK |
DC input diode current |
VI < 0 |
18 |
mA |
| VI |
DC input voltage3 |
|
1.2 to +7.0 |
V |
| IOK |
DC output diode current |
VO < 0 |
50 |
mA |
| VOUT |
DC output voltage3 |
output in Off or High state |
0.5 to +5.5 |
V |
| IOUT |
DC output current |
output in Low state |
40 |
mA |
| Tstg |
Storage temperature range |
|
65 to 150 |
°C |
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
Required Field 
